am - sjst60 bidirectional triode thyristor (triac) a d v a n c i n g t h e s e m i c o n d u c t o r i n d u s t r y s i n c e 1 9 7 2 ? 2013 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 1 of 2 revised 06/2013 a bstract the am - sjst60 triac is suitable for general purpose ac switching, and can be used as an on/off function in applications such as static relays, heating regulation, induction motor circuitry, light dim mers, motor speed control, and can be used in a diverse n umber of other electrical des i gns. parameter value unit i trms = 60 a v drm /v rrm >= 800 v v tm @80a < 1.75 v m ain features 1 2 3 parameter symbol value unit storage temperature range tstg - 40 to +150 c operating junction temp. range tj - 40 to +125 c nonrepetitive surge peak on - state current full cycle, tj=25c, f=50hz, t=20ms i tsm 550 a i 2 t value for fusing, tp=10ms i 2 t 880 a 2 s critical rate of rise of on - state current i g =2xi gt , trs=100ns, f=120hz, tj=125c di/dt 50 a/s peak gate current @ tp=20s, tj=125c i gm 4 a peak gate power dissipation @ tp=20s, tj=125c p gm 10 w average gate power dissipation @ tj=125c p gav 1 w a bsolute maximum ratings test condition symbol value/range unit v d =12v, and r l =33 i gt 1 10 to 20 ma i gt 2, i gt 3 20 to 45 ma v gt 1.2 v v d =v drm , r l =3.3k, tj=125c v gd 0.2 v i g =1.2i gt i l 1, i l 3 < 60 ma i l 2 < 120 ma i t =100ma i h < 60 ma v d =67% v drm gate open, tj=125c dv/dt > 500 v/s without snubber, tj=125c (di/dt)c 5 to 20 a/ms e lectrical characteristics symbol p k g. value unit r th(j - c) tg - c 0.8 c/w *junction to case (ac) t hermal resistance
a d v a n c i n g t h e s e m i c o n d u c t o r i n d u s t r y s i n c e 1 9 7 2 am - sjst60 bidirectional triode thyristor (triac) ? 2013 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 2 of 2 revised 06/2013 t g - c package dimensions
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